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ετυμολογία

MOSFET$506086$ - translation to Αγγλικά

TYPE OF MOSFET WHERE THE GATE IS ELECTRICALLY ISOLATD

Floating-gate transistor; Floating gate transistor; Floating Gate MOSFETs; Floating Gate Transistors; FGMOS; FG-MOS; Floating Gate Transistor; Floating gate transistors; Floating-gate transistors; Floating gate; FGMOSFET; Floating Gate MOSFET; Floating gate MOSFET; Floating-gate

MOSFET

veldeffecttransistor, waarin de transmissieschuif door isolering van het leidende kanaal is gescheiden, MOSFET (Elektronica)

metal oxide semiconductor field-effect transistor

TYPE OF FIELD-EFFECT TRANSISTOR

Mos technology; Metal oxide semiconductor field-effect transistor; MOSFETs; Metal-Oxide-Semiconductor Field-Effect Transistor; Double Diffused MOS; IGFET; Mosfet; Metal Oxide Semiconductor; Mosfets; DMOS; Mofset; Metal–oxide–semiconductor structure; Dmos; MOS FET; CMOSFET; Metal-Oxide-Semiconductor structure; MISFET; Metal oxide semiconductor; Metal–Oxide–Semiconductor structure; N-FET; Metal oxide semiconductor field effect transistor; Metal-oxide-semiconductor field-effect transistor; Metal-oxide-semiconductor structure; Metal–oxide–semiconductor field-effect transistor; Metal–Oxide–Semiconductor Field-Effect Transistor; Metal–Oxide–Semiconductor field-effect transistor; MOS capacitor; Metal-oxide-semiconductor; MOSFET heatsink; MOSFET heat sink; Metal-Insulator-Semiconductor Field-Effect Transistor; Metal–oxide–semiconductor; Igfet; Metal-oxide-silicon; Insulated-gate Field-effect Transistor; Insulated gate Field-effect Transistor; Insulated gate Field-Effect transistor; Insulated Gate Field-effect Transistor; Metal Oxide Semiconductor Field Effect Transistor; MOS-FET; Insulated gate field-effect transistor; Dual-gate FET; Dual-gate field-effect transistor; Metal-Oxide-Semiconductor field-effect transistor; Metal-oxide semiconductor; NFET; MOSFET scaling; NMOS transistor; PMOS transistor; PMOS FET; NMOS FET; MOS transistor; MOS technology; Metal–oxide–silicon

veldeffecttransistor waarin de transmissieschuif gescheiden is van het leidende kanaal door isolering, MOSFET (Elektronica)

Ορισμός

MOSFET

Metal Oxide Semiconductor Field Effect Transistor (Reference: IC, FET)

Εμφάνιση περισσότερων ορισμών

Βικιπαίδεια

Floating-gate MOSFET

The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only capacitively connected to the FG. Since the FG is surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time, nowadays typically longer than 10 years. Usually Fowler-Nordheim tunneling and hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.

The FGMOS is commonly used as a floating-gate memory cell, the digital storage element in EPROM, EEPROM and flash memory technologies. Other uses of the FGMOS include a neuronal computational element in neural networks, analog storage element, digital potentiometers and single-transistor DACs.

https://en.wikipedia.org/wiki/Floating-gate MOSFET